GaN is a semiconductor material of third-generation with a wide forbidden-band width and better characteristics than the GaAs or Si materials of first-generation.
GaN devices, due to their high thermal conductivity and large band gaps, can operate at temperatures over 200 degC. This allows them to carry higher energy densities and greater reliability. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the device. This is good for improving the overall efficiency of the product.

GaN semiconductors can therefore be designed to have a higher bandwidth, higher amplifying gain, greater energy efficiency, as well as smaller dimensions. These characteristics are consistent with "tonalities" in the semiconductor industry.

The base station power amplifier also uses GaN. Gallium nitride, gallium arsenide and indium phosphide are common semiconductor materials used in radio frequency applications.

GaN devices are more powerful than processes with high frequency, such as indium phosphide and gallium arsenide. GaN also has better frequency characteristics compared to processes that produce power such as LDCMOS or silicon carbide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and using carrier aggregation.

Gallium nitride can achieve higher power density than silicon or any other device. GaN has a higher power density. GaN's small size is an advantage when it comes to a power level. Smaller devices can reduce device capacitance, which makes the design of systems with higher bandwidth easier. Power Amplifiers (PA) are a critical component of the RF Circuit.

According to the current application, the power amplifier is mainly made up of a gallium-arsenide power amplifi er and a complementary metallic oxide semiconductor power amplifi er (CMOSPA), of which GaAs is the most common. But with the advent 5G, GaAs will be unable to maintain high integration in such high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means higher operating temperatures.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will be available in the second half of 2019, and by the end Christmas/New Year. According to reports 5G is expected to be up to 100 times more efficient than 4G networks. It will reach Gigabits per second and reduce latency.

As well as the increase in base station density and number, there will be a large increase in RF devices. As a result, in comparison with the 3G/4G eras, 5G devices will have a dozens or even hundreds of times greater density. Therefore, cost control and silicon-based GaN technology has a large cost advantage. It is possible to achieve a market breakthrough using silicon-based GaN technologies.

Commercialization of any new semiconductor technology is difficult, and this can be seen in the evolution of the last two generations. GaN, which is currently in this stage, will also be costing more to civilians because of the increased demand for silicon-based devices.

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